Российские нанотехнологии. 2019; 14: 77-80
Гетероструктуры на основе нитрида галлия на подложках кремния для мощных СВЧ-транзисторов
https://doi.org/10.21517/1992-7223-2019-7-8-77-80Аннотация
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Title in english. 2019; 14: 77-80
Gallium nitride-based heterostructures on silicon substrates for powerful microwave transistors
https://doi.org/10.21517/1992-7223-2019-7-8-77-80Abstract
Unique approach for the formation of GaN heterostructures on silicon substrates at low growth temperatures (less than 950°C) has been proposed. The heterostructure has an atomically smooth surface with a root mean square roughness of 0.45 nm and high crystalline quality. The average sheet resistance of the 2D electron gas was 415 Ohm/square with electron concentration of 1.65·1013 cm-2 and mobility of 920 cm2/V·s. The maximum of the drain saturation current for transistors with a gate width of 1.2 mm was 930 mA/mm, which corresponds to the best world results for gallium nitride transistors on silicon substrates.
References
1. Ueda T. // Japanese Journal of Applied Physics. 2019. V. 58. P. SC0804.
2. Selvaraj S.L., Suzue T., Egawa T. // IEEE Electron Device Lett. 2009. V. 30. № 6. P. 587.
3. Zhu D., Wallis D.J., Humphreys C.J. // Rep. Prog. Phys. 2013. V. 76. P. 106501.
4. Baliga B.J. // Semicond. Sci. Technol. 2013. V. 28. № 7. P. 074011.
5. Wang K., Xing Y., Han J. et al. // Journal of Alloys and Compounds. 2016. V. 671. P. 435.
6. Kukushkin S.A., Mizerov A.M., Osipov A.V. et al. // Thin Solid Films. 2018. V. 646. P. 158.
7. Semond F., Cordier Y., Grandjean N. et al. // Phys. Status Solidi. A. 2001. V. 188. № 2. P. 501.
8. Feng Y., Wei H., Yang S. et al. // Sci. Rep. 2014. V. 4. P. 6416.
9. Chandrasekar H., Bhat K.N., Rangarajan M. et al. // Sci. Rep. 2017. V. 7. P. 15749.
10. Li M., Wang Y., Wong K.M., Lau K.M. // Chin. Phys. B. 2014. V. 23. № 3. P. 038403.
11. Chernykh M.Y., Ezubchenko I.S., Mayboroda I.O., Zanaveskin M.L. // Journal of Crystal Growth. 2019. V. 507. P. 200.
12. Lin P., Tien C., Wang T. et al. // Crystal. 2017. V. 7. P. 134.
13. Corekci S., Ozturk M.K., Yu H. et al. // Fizika i tekhnika poluprovodnikov. 2013. T. 47. Vyp. 6. S. 810.
14. Borga M., Meneghini M., Stoff els S. et al. // Microelectronics Reliability. 2018. V. 88–90. P. 584.
15. Quay R., Schwantuschke D., Ture E. et al. // Phys. Status Solidi. A. 2018. V. 215. P. 1700655.
16. Wośko M., Szymański T., Paszkiewicz B. et al. // Journal of Materials Science: Materials in Electronics. 2019. V. 30. P. 4111.
17. Rawal D., Sharma S., Kapoor S. et al. // Solid State Electronics Letters. 2019. V. 1. P. 30.
